Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

Hashim, Yasir (2020) Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling. International Journal of Electrical and Computer Engineering, 11 (1). pp. 780-787. ISSN 20888708

[img] Text (Research Article)
23068-46023-1-PB.pdf - Published Version

Download (753kB)
Official URL: http://ijece.iaescore.com/

Abstract

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.

Item Type: Article
Uncontrolled Keywords: Downscaling, GAA, nanowire, sub-threshold swing, TFET
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Q Science > QA Mathematics > QA76 Computer software
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Depositing User: ePrints deposit
Date Deposited: 19 Jan 2021 14:03
Last Modified: 19 Jan 2021 14:03
URI: http://eprints.tiu.edu.iq/id/eprint/334

Actions (login required)

View Item View Item