Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)

Hashim, Yasir (2024) Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET). Journal of Nano- and Electronic Physics, 16 (1). ISSN 2306-4277

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Official URL: https://jnep.sumdu.edu.ua/en/full_article/3841

Abstract

This study analyzes the effects of temperature on transfer characteristics, threshold voltage, ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS) in N-Channel Gallium Phosphide (GaP) Fin Fied Effect Transistor (FinFET). GaP-FinFET's temperature properties have been studied using the (MuGFET) simulation tool. Because of the lower ION/IOFF ratio, higher DIBL, and higher SS at higher temperatures, the results show a detrimental impact of increased working temperature on the use of GaP-FinFET in electronic circuits, such as digital circuits and amplifier circuits. Furthermore, the best situation for using a transistor as a temperature nano-sensor is when it is in the ON state.

Item Type:	Article
Uncontrolled Keywords:	GaP, FinFET, N-Channel, Temperature, Sensor
Subjects:	Q Science > QA Mathematics > QA75 Electronic computers. Computer science Engineering > Technology & Engineering Engineering > Computer engineering Engineering > TK Electrical engineering
Depositing User:	ePrints deposit
Date Deposited:	29 Sep 2024 05:54
Last Modified:	29 Sep 2024 05:54
URI:	http://eprints.tiu.edu.iq/id/eprint/1637

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