The Effect of RF-Plasma Power on the Growth of III-Nitride Materials

Mustafa Hamad, Samir and A. Barzinjy, Azeez and Jalal Ismael, Haidar and A. Hamad, Mohammed (2019) The Effect of RF-Plasma Power on the Growth of III-Nitride Materials. Eurasian Journal of Science and Engineering, 4 (3). pp. 66-73. ISSN 24145629

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In this study, n-InGaN nanorods were grown directly on p-type Si (111) substrates by plasmaassisted molecular beam epitaxy (PA-MBE). The crystal structure is investigated using the reflection of high-energy electron diffraction patterns. Additionally, the morphology and optical properties of the InGaN nanorods were investigated using both scanning electron microscopy and room temperature photoluminescence spectra. The results showed that, the PL peak position shifted toward lower energy by increasing plasma power due to increase in In concentration within InGaN nanorods. It can be observed that, through using optimum growth conditions, a uniform indium up to 34% can be achieved with no phase split-up or indium isolation. Thus, none of the mobile In-droplets on the surface were observed.

Item Type: Article
Uncontrolled Keywords: n-type InGaN Nanorods, PA-MBE, Photoluminescence Spectra, Plasma Power
Subjects: Q Science > QC Physics
Divisions: Eurasian Journal of Science and Engineering > SPECIALISSUE 3 (2019)
Depositing User: ePrints deposit
Date Deposited: 05 Oct 2020 20:34
Last Modified: 23 Feb 2021 07:22

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