A new factor for fabrication technologies evaluation for silicon nanowire transistors

Hashim, Yasir (2020) A new factor for fabrication technologies evaluation for silicon nanowire transistors. TELKOMNIKA (Telecommunication, Computing, Electronics and Control), 18 (5). pp. 2597-2605. ISSN 16936930

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Abstract

This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography.

Item Type: Article
Uncontrolled Keywords: AFM, IC, nanolithography, SiNWT, transistor
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Q Science > QA Mathematics > QA76 Computer software
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Depositing User: ePrints deposit
Date Deposited: 05 Apr 2021 08:50
Last Modified: 05 Apr 2021 08:50
URI: http://eprints.tiu.edu.iq/id/eprint/476

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