Temperature characteristics of Gate all around nanowire channel Si-TFET

Hashim, Yasir (2021) Temperature characteristics of Gate all around nanowire channel Si-TFET. 5th International Conference on Electronic Design, 1755. pp. 1-7.

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Natheer_Abdul-kadir_Agha_2021_J._Phys.__Conf._Ser._1755_012045.pdf - Published Version

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Official URL: https://iopscience.iop.org/journal/1742-6596

Abstract

This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been used to investigate the working temperature on the Si-TFET characteristics. The temperature range in this study is from -25 to 150 oC. The results indicate that the TFET must work in electronic circuits with the lower temperature as possible to get better performances. Furthermore, the TFET has good performances as a temperature nanosensor with diode connection mode under ON conditions.

Item Type: Article
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Depositing User: ePrints deposit
Date Deposited: 07 Apr 2021 07:12
Last Modified: 07 Apr 2021 07:12
URI: http://eprints.tiu.edu.iq/id/eprint/502

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